Detailansicht
Design of Low Leakage SRAM
ISBN/EAN: 9786139907861
Umbreit-Nr.: 5784334
Sprache:
Englisch
Umfang: 56 S.
Format in cm: 0.4 x 22 x 15
Einband:
kartoniertes Buch
Erschienen am 21.10.2018
Auflage: 1/2018
- Zusatztext
- The most research on the power consumption of circuits has been concentrated on the switching power and the power dissipated by the leakage current has been the relatively minor area. However, in the current VLSI process, the sub-threshold current becomes one of the major factors of the power consumption, especially in high-end memory. To reduce the leakage power in the SRAM, the power gating method can be applied and a major technique of the power gating is using sleep transistors to control the sub-threshold current. In this project, dual threshold voltages are adopted; normal SRAM cells have lower threshold voltages and the higher threshold voltages control the sleep transistors. The size of sleep transistors can be chosen by the worst case current and are applied to every block.
- Autorenportrait
- Mr.Rajan Prasad Tripathi works as an Assistant Professor in Department of Electronics and Communication Engineering, Amity School of Engineering and Technology. Mr. Rahul Kumar Verma works an Assistant Professor in Department of Electronics and Communication Engineering, Amity School of Engineering and Technology